Prof. Xuan Fang at Changchun university of science and technology, China
Xuan fang is a distinguished researcher specializing in III-V and II-VI semiconductor materials and their applications in optoelectronic devices. His expertise includes epitaxial growth, low-dimensional nanostructure fabrication, and optical characterization. His groundbreaking work spans nanostructured semiconductors, mid-infrared laser technology, and bio-friendly materials, leading to high-impact publications and patents. He has spearheaded multiple national and provincial research projects, focusing on advanced semiconductor materials for LEDs, lasers, and photodetectors. Recognized for his contributions, he has received prestigious awards, including the Jin Guofan Young Scholar Award 🏆.
Professional Profile:
Orcid
Education & Experience 🎓📜
✅ Ph.D. in Semiconductor Materials – Specialized in III-V and II-VI materials 🔬
✅ Principal Investigator (PI) in multiple NSFC, provincial, and military-funded projects 🏗️
✅ Postdoctoral Researcher – Focused on bound-state exciton regulation in ZnO nanostructures ⚛️
✅ Expert in Epitaxial Growth & Optical Characterization – Developed mid-IR lasers, ZnO LEDs 🌟
✅ Contributor to Advanced Semiconductor Research – Published in top journals like Advanced Materials, ACS Applied Materials & Interfaces 📚
Professional Development 🚀🔬
With a deep passion for semiconductor research, xuan fang has led pioneering work in nanostructures, mid-IR lasers, and bio-integrated materials. His contributions to wide-bandgap semiconductor devices have advanced optoelectronics significantly, especially in the areas of ZnO LEDs, InGaAsSb-based quantum wells, and type-II superlattices. As a leader in multi-scale material integration, he has successfully combined ALD and 3D printing for bio-compatible semiconductors 🏗️. His expertise extends beyond academia, actively collaborating on industrial and military semiconductor applications, ensuring real-world impact in next-gen photonic technologies ⚡.
Research Focus 🔍🛠️
Xuan fang’s research spans semiconductor physics, nanotechnology, and optoelectronic devices, with a special focus on:
🔹 II-VI Semiconductor Materials – ZnO-based LEDs, photodetectors, and nanostructures 🌟
🔹 III-V Semiconductor Materials – Mid-IR InGaAsSb lasers, quantum wells, and superlattices 🔦
🔹 Low-Dimensional Nanostructures – Core-shell nanowires, heterojunctions, and bound-state carrier effects 🧬
🔹 Bio-Compatible Semiconductors – Integration of ALD and 3D printing for biological applications 🏥
🔹 Military & Industrial Applications – Si-based lasers, plasmonic micro-nano structures 🔬
Awards & Honors 🏅✨
🏆 Jin Guofan Young Scholar Award – Chinese Instrument and Control Society (2018)
🥇 First Prize – Jilin Provincial Natural Science Academic Achievement Award (2017)
🥉 Third Prize – Jilin Provincial Science & Technology Progress Award (2012)
Publication Top Notes
1. “Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting”
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Publication Details: Published in Nanomaterials on December 31, 2024.
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DOI: 10.3390/nano15010052
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Summary: This study investigates the manipulation of crystallinity and morphology of bismuth selenide (Bi₂Se₃) through electrochemical exfoliation. The research focuses on enhancing the material’s nonlinear optical properties, specifically reverse saturable absorption (RSA) and optical limiting. Findings indicate that Bi₂Se₃ particles exhibit stronger RSA compared to sheet-like structures, attributed to a higher degree of oxidation and a greater number of localized defect states in the particle structures.
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Access: The full text is available at MDPI Nanomaterials.
2. “Long-Wave Infrared Emission Properties of Strain-Balanced InAs/InₓGa₁₋ₓAsᵧSb₁₋ᵧ Type-II Superlattice on Different Substrates”
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Publication Details: Published in Rare Metals in July 2024.
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DOI: 10.1007/s12598-024-02655-3
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Summary: This research focuses on the development of strain-balanced InAs/InₓGa₁₋ₓAsᵧSb₁₋ᵧ type-II superlattices grown on InAs and GaSb substrates. The study achieved high-quality superlattices without lattice mismatch, which is crucial for the advancement of infrared optoelectronic devices. The findings contribute to understanding the luminescent mechanisms and improving the quality of epitaxial materials for practical applications.
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Access: The full text is available at Springer Link.
3. “Atomic Imaging and Optical Properties of InAs/In₀.₅Ga₀.₅As₀.₅Sb₀.₅ Type II Superlattice”
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Publication Details: Published in Applied Physics Letters on June 17, 2024.
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DOI: 10.1063/5.0209805
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Summary: This paper utilizes atomic imaging techniques to analyze the arrangement and distribution of elements within InAs/In₀.₅Ga₀.₅As₀.₅Sb₀.₅ type-II superlattices. The study provides insights into the material’s optical properties, which are essential for the development of high-performance infrared detectors.
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Access: The full text is available at Applied Physics Letters.
4. “Review of 2D Bi₂X₃ (X = S, Se, Te): From Preparation to Photodetector”
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Publication Details: Published in Rare Metals in June 2024.
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DOI: 10.1007/s12598-023-02560-1
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Summary: This comprehensive review covers the preparation methods, properties, and applications of two-dimensional Bi₂X₃ (X = S, Se, Te) materials, with a particular focus on their use in photodetectors. The paper discusses recent advancements and challenges in the field, providing a valuable resource for researchers interested in 2D materials and optoelectronic applications.
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Access: The full text is available at Rare Metals.
5. “Adsorption Behavior of NO and NO₂ on Two-Dimensional As, Sb, and Bi Materials: First-Principles Insights”
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Publication Details: Published in Materials in February 2024.
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DOI: 10.3390/ma17051024
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Summary: This study systematically examines the adsorption energies, density of states, and work functions of two-dimensional arsenic (As), antimony (Sb), and bismuth (Bi) materials in relation to NO and NO₂ gases. The research provides a comprehensive assessment of the gas detection capabilities of these materials, contributing to the development of sensitive and selective gas sensors.
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Access: The full text is available at MDPI Materials.
Conclusion
Dr. Xuan Fang is a distinguished researcher whose groundbreaking work in semiconductor optoelectronics has led to novel materials, device innovations, and significant advancements in laser and LED technology. His extensive publication record, strong research funding, impactful patents, and prestigious awards make him a highly deserving candidate for the Best Researcher Award.