Dr. Xuan Fang | Semiconductor Materials | Best Researcher Award
Research Fellow at State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, China.
Dr. Xuan Fang π is a dedicated Research Fellow at the State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology π¨π³. Specializing in advanced optoelectronic materials and devices π¬, she focuses on structural engineering, low-dimensional materials, and MBE growth techniques βοΈ. Her pioneering monolayer-distributed epitaxy strategy has resolved key challenges in IIIβV alloy semiconductor growth π§ͺ. Dr. Fangβs innovations, including mid-IR emitting βsuperalloyβ structures π‘, push the limits of bandgap engineering and open new pathways for next-generation photonic devices π. She is also a prolific inventor with multiple national patents π .
Professional Profile:
π Suitability for Best Researcher Award – Dr. Xuan Fang
Dr. Xuan Fang exhibits all the hallmarks of a top-tier researcher in the field of advanced optoelectronic materials and semiconductor device engineering. Her proven research leadership, technological innovation, and impactful contributions to semiconductor materials, MBE growth techniques, and mid-infrared photonics make her an ideal candidate for this prestigious recognition.
π Education & Experience
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π Ph.D. in Optoelectronics or Physics β Specializing in semiconductor materials and nanotechnology.
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π§ͺ Research Fellow, State Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology (Current).
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πΌ Principal Investigator in over 10 national and regional research projects, including NSFC, China Postdoc Foundation, and industry collaborations.
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π§ Expert in MBE growth, energy band prediction, low-dimensional materials, and mid-IR photonic devices.
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π Published multiple high-impact papers in SCI-indexed journals (e.g., Rare Metals, Nano Research).
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π οΈ Holds six national patents on semiconductor device structures and epitaxy methods.
π Professional DevelopmentΒ
Dr. Xuan Fang’s professional journey is marked by innovative thinking and technological excellence π―. As Principal Investigator on numerous competitive projects π, she has developed and led groundbreaking work on III-V superlattices, mid-IR lasers, and photodetectors π‘. She bridges fundamental science and real-world applications, contributing novel concepts like monolayer-distributed epitaxy and high-responsivity avalanche photodiodes π. Through collaborative research and consistent experimentation, she fosters cutting-edge semiconductor advancements π§ͺ. Her dedication to research excellence, coupled with intellectual property creation π, reflects a career built on curiosity, precision, and scientific impact π.
π¬ Research Focus Category
Dr. Fangβs research lies at the intersection of advanced semiconductor materials and device engineering βοΈ. Her focus spans low-dimensional systems, type-II superlattices, quantum heterostructures, and mid-infrared optoelectronics π¦. She specializes in molecular beam epitaxy (MBE) to develop multicomponent alloy structures with high luminescence and carrier lifetimes π. With deep expertise in energy band structure prediction and device integration, Dr. Fang addresses critical challenges in laser efficiency, detection precision, and material compatibility π. Her work propels forward-thinking technologies in infrared imaging, sensing, and next-gen photonic integration π.
π Awards & Honors
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π§ Principal Investigator for major NSFC and China Postdoc Foundation projects.
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π₯ Multiple national patents granted on novel epitaxy methods and optoelectronic devices.
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π§ͺ Recognized for pioneering mid-IR superalloy device structures.
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π Consistently publishes in high-impact journals indexed in SCI and Scopus.
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π Leading innovator in semiconductor structural engineering and optoelectronic integration.
Publication Top Notes
1. Cu-Plasma-Induced Interfacial Engineering for Nanosecond Scale WSβ/CuO Heterojunction Photodetectors
Authors: Tianze Kan, Kaixi Shi, Fujun Liu, Jinhua Li, Xuan Fang
Journal: Advanced Optical Materials, 2025
Summary: This study presents a novel Cu-plasma treatment to engineer the WSβ/CuO interface, significantly boosting carrier dynamics and photoresponse speed. Achieving nanosecond-level response, the device offers enhanced performance for ultrafast photodetection in optoelectronic systems.
Citations: 1
2. Nanoengineering Construction of g-CβNβ/BiβWOβ S-Scheme Heterojunctions for Enhanced COβ Reduction and Pollutant Degradation
Authors: Bingke Zhang, Yaxin Liu, Dongbo Wang, Liancheng Zhao, Jinzhong Wang
Journal: Separation and Purification Technology, 2025
Summary: This paper demonstrates a g-CβNβ/BiβWOβ S-scheme heterojunction that significantly improves photocatalytic COβ reduction and pollutant degradation. The synergistic interface enhances charge separation and transfer, yielding superior photocatalytic efficiency.
Citations: 17
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3. Plasma-Enhanced Interfacial Electric Field for High-Performance MoSβ/p-Si Photovoltaic Photodetectors
Authors: Wanyu Wang, Kaixi Shi, Jinhua Li, Xueying Chu, Xuan Fang
Journal: ACS Applied Nano Materials, 2024
Summary: The authors explore plasma treatment to create a strong interfacial electric field in MoSβ/p-Si heterostructures, enabling enhanced light absorption and charge carrier dynamics for high-performance photovoltaic photodetection.
Citations: 1
4. High-Performance Self-Driven Broadband Photoelectrochemical Photodetector Based on rGO/BiβTeβ Heterojunction
Authors: Chenchen Zhao, Yangyang Liu, Dongbo Wang, Liancheng Zhao, Jinzhong Wang
Journal: Nano Materials Science, 2024 | Open Access
Summary: A reduced graphene oxide (rGO)/BiβTeβ heterojunction-based self-powered photodetector is introduced, featuring broadband detection and fast photoresponse, promising for next-gen PEC optoelectronics.
Citations: 3
5. Al@AlβOβ Core-Shell Plasmonic Design for Solving High ResponsivityβLow Dark Current Tradeoff in MoSβ Photodetectors
Authors: Ziquan Shen, Wanyu Wang, Zhe Xu, Xuan Fang, Mingze Xu
Journal: Applied Physics Letters, 2024
Summary: By integrating Al@AlβOβ core-shell nanostructures, this study mitigates the tradeoff between responsivity and dark current in MoSβ photodetectors, enhancing device performance through plasmonic effects.
Citations: 2
6. Design of a Self-Powered 2D Te/PtSeβ Heterojunction for Room-Temperature NIR Detection
Authors: Fengtian Xia, Dongbo Wang, Wen He, Lihua Liu, Liancheng Zhao
Journal: Journal of Materials Chemistry C, 2024
Summary: This paper introduces a novel 2D Te/PtSeβ heterojunction photodetector capable of room-temperature NIR sensing. The self-powered device exhibits low power consumption, high sensitivity, and stability.
Citations: 1
π§Ύ Conclusion
Dr. Xuan Fang is not only a prolific and innovative researcher but also a strategic thinker with a rare blend of academic excellence, technical innovation, and practical relevance. Her pioneering work in mid-IR optoelectronics, mastery of semiconductor growth technologies, and tangible contributions through patents and publications establish her as a top contender for the Best Researcher Award.