Giuseppe Carbone | Robotics | Outstanding Scientist Award

Slobodan Radošević | Symmetry breaking | Best Researcher Award

Safaa Hassan | Remote sensing | Best Researcher Award

Hafiz Shehbaz Ahmad | Textile | Best Researcher Award

Jalil Manafian | Applied Mathematics | Best Researcher Award

Neeraj Vidhyarthi | Flow boiling | Best Researcher Award

B Venkateswarlu | Fluid dynamics | Best Researcher Award

Tan Zhiguang | Phenomenology model | Best Researcher Award

Ding-fang Zeng | Black Hole Physics | Excellence in Innovation

Ramazan LOK | Fabrication of Mems | Best Researcher Award

Dr. Ramazan LOK | Fabrication of Mems | Best Researcher Award

Lecturer at Abant Izzet Baysal Universty

Short Bio

Dr. Ramazan Lök is a Lecturer and researcher at Bolu Abant İzzet Baysal University, specializing in semiconductor devices, radiation detectors, and nanotechnology applications. With a strong educational foundation and numerous collaborative research projects, Dr. Lök continues to contribute significantly to scientific advancements in microelectronics and radiation sensing technologies.

Professional Profile

Educational Background

  • Dr. Lök earned his Bachelor’s degree in Physics from Bolu Abant İzzet Baysal University in 2012. He pursued a Master’s degree in Occupational Health and Safety from Gedik University, where he focused on “Occupational Safety in Nuclear Radiation Work,” under the guidance of Prof. Dr. Hanifi Sarac. Concurrently, he completed another Master’s degree in Physics at Bolu Abant İzzet Baysal University in 2017, researching the “Electrical Characterization and Gamma Irradiation Response of HfSiO4 Metal Oxide Semiconductor (MOS) Capacitors” with Prof. Dr. Hüseyin Karacalı as his advisor.
    In 2022, Dr. Lök completed his Doctorate in Physics at Bolu Abant İzzet Baysal University, where his thesis, supervised by Prof. Dr. Hüseyin Karacalı, focused on the “Fabrication and Characterization of Temperature Sensors.”

Professional Experience

  • Dr. Lök is actively involved in both research and teaching at Bolu Abant İzzet Baysal University. He has contributed to several national and international research projects, including collaborations with TÜBİTAK (The Scientific and Technological Research Council of Turkey). As a researcher and project leader, he has worked on topics such as radiation sensor production, semiconductor material characterization, and high-performance photodetectors.

Research Interests

  • Dr. Lök’s research focuses on:
    • Semiconductor materials and devices.
    • Production and characterization of semiconductor nanocrystals and nanostructures for microelectronics.
    • Thin films and nanotechnology.
    • Radiation sensors, dosimeters, RadFETs, and NürFETs.
    • Biosensors.
    • Development of temperature and pressure sensors.
    • Response functions of semiconductor detectors.

Author Metrics

Dr. Lök has contributed to various high-impact research publications, reflecting his dedication to advancing semiconductor and radiation sensor technologies. His work has been published in indexed journals, earning recognition in his field.

Publication Top Noted

1. Frequency-dependent electrical characteristics of BiFeO₃ MOS capacitors

  • Authors: S. Kaya, R. Lök, A. Aktag, J. Seidel, E. Yılmaz
  • Journal: Journal of Alloys and Compounds
  • Year: 2014
  • Volume and Pages: Volume 583, Pages 476–480
  • Citations: 62
  • Abstract:This study investigates the electrical behavior of BiFeO₃-based MOS capacitors as a function of frequency. The findings indicate that BiFeO₃, as a ferroelectric material, enhances the frequency response and dielectric properties of MOS structures. These characteristics make it a promising candidate for advanced microelectronic applications, including memory and sensing devices.

2. Structural characterization and electrical properties of Nd₂O₃ by sol–gel method

  • Authors: R. Lök, E. Budak, E. Yılmaz
  • Journal: Journal of Materials Science: Materials in Electronics
  • Year: 2020
  • Volume and Pages: Volume 31, Issue 4, Pages 3111–3118
  • Citations: 31
  • Abstract:This paper details the synthesis of Nd₂O₃ thin films using the sol–gel method and their structural and electrical characterizations. The study identifies superior dielectric properties and structural uniformity, making Nd₂O₃ thin films highly suitable for integration into microelectronic devices.

3. A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO₄/p-Si MOS capacitors

  • Authors: R. Lök, S. Kaya, H. Karacalı, E. Yılmaz
  • Journal: Journal of Materials Science: Materials in Electronics
  • Year: 2016
  • Volume and Pages: Volume 27, Pages 13154–13160
  • Citations: 29
  • Abstract:The electrical performance of Al/HfSiO₄/p-Si MOS capacitors is analyzed in this study, focusing on how frequency affects the interface states and dielectric behavior. The research emphasizes HfSiO₄’s potential as an alternative high-k dielectric material for next-generation MOS devices due to its excellent frequency response.

4. Co-60 gamma irradiation influences on physical, chemical, and electrical characteristics of HfO₂/Si thin films

  • Authors: S. Kaya, I. Yıldız, R. Lök, E. Yılmaz
  • Journal: Radiation Physics and Chemistry
  • Year: 2018
  • Volume and Pages: Volume 150, Pages 64–70
  • Citations: 22
  • Abstract:This research explores the impact of Co-60 gamma irradiation on HfO₂/Si thin films. Structural, chemical, and electrical changes are observed post-irradiation, shedding light on the material’s stability and performance in radiation-prone environments, highlighting its relevance for space and nuclear applications.

5. The Co-60 gamma-ray irradiation effects on the Al/HfSiO₄/p-Si/Al MOS capacitors

      • Authors: R. Lök, S. Kaya, H. Karacalı, E. Yılmaz
      • Journal: Radiation Physics and Chemistry
      • Year: 2017
      • Volume and Pages: Volume 141, Pages 155–159
      • Citations: 22
      • Abstract:This paper evaluates how Co-60 gamma-ray irradiation affects the structural and electrical properties of Al/HfSiO₄/p-Si/Al MOS capacitors. The study reports changes in capacitance, conductance, and series resistance post-irradiation, providing valuable insights into the application of these materials in radiation detection and dosimetry.

Conclusion

Dr. ramazan lök is a strong candidate for the Best Researcher Award, with notable contributions to semiconductor technology, radiation sensors, and nanostructures. His innovative and impactful research, coupled with his academic dedication, positions him as a valuable asset to the scientific community. Enhancing his international outreach and industrial collaborations could further solidify his reputation as a leading researcher.